to - 220 -3l 1. base 2. collector 3. emitter jiangsu changjiang electron ics technology co., l td to-220 -3l plastic-encapsulate transistors 2SB861 transistor (pnp) features z low frequency power amplifier color tv vertical deflection output maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-b ase breakdown voltage v (br)cbo i c =-5ma,i e =0 -200 v collector-emitter b reakdown voltage v (br)ceo * i c =-50ma,i b =0 -150 v emitter-base breakdown voltage v (br)ebo i e =-5ma,i c =0 -6 v collector cu t-off current i cbo v cb =-120v,i e =0 -1 a emitter cut-off current i ebo v eb =-5v,i c =0 -1 a h fe(1) v ce =-4v, i c =-50 ma 60 200 dc current g ain h fe(2) * v ce =-10v, i c =-500ma 60 collector-emitter satu ration voltage v ce(sat) i c =-500ma,i b =-50ma -3 v base-emitter voltage v be v ce =-4v, i c =-50ma -1 v collector o utput capacitance c ob v cb =-10v,i e =0, f=1mhz 30 pf *pulse test classification of h fe(1) rank b c range 60-120 100-200 symbol parameter v alue unit v cbo collector-base v oltage -200 v v ceo collector-emitter volt age -150 v v ebo emitter-base voltag e -6 v i c collector curren t -2 a p c collector powe r dissipation 1.8 w r ja thermal resistance fr om junction to ambient 69 / w t j junction te mperature 150 t stg storage te mperature -55~+150 www.cj-elec.com 1 c , may ,201 5
-0 .1 -1 -10 10 100 1000 - 0 - 100 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -1100 -1200 -1 -10 -100 -1000 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 3000 - 0.1 - 1 - 10 -100 -1000 -0 -200 -400 -600 -800 -1000 -1200 -0 .1 -1 -1 0 - 100 -1000 -0 -50 -100 -150 -200 -250 - 0.1 - 1 - 10 -100 -1000 10 100 1000 -0 -1 -2 -3 -4 -5 -6 -0 .0 0 -0.01 -0.02 -0.03 -0.04 -0.05 -0.06 -0.07 -0.08 -0.09 -0.10 -0.11 -0.12 capacitance c ( p f) reverse volt ag e v (v) c ob c ib f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? -30 t a =1 0 0 t a =2 5 collcetor current i c (ma) base-em m iter voltage v be (mv) i c v be com m o n emitter v ce =-4v co llect o r power dissipation p c (mw) ambient t emperature t a ( ) p c ? ? t a ?? base-emitt er saturation voltage v bes a t (mv) collector current i c (ma) =10 t a =100 t a =25 i c v b e sat ?? collector-emitter saturation volt ag e v ces a t (mv) collector current i c (ma) i c v c e sat ?? t a =100 t a =25 =10 -2000 -2000 -2000 -2000 dc current gain h fe collector current i c (m a) com m o n emitter v ce =-4v t a =25 t a =100 i c h fe ?? -1 ma -0 .9 ma -0 .8 ma -0 .7 ma -0 .6 ma -0 .5 ma -0 .4 ma -0 .3 ma -0 .2 ma i b =- 0. 1m a collector current i c (a) collector-em itter voltage v ce (v) c o mmo n emitter t a =25 st at ic characteristic ty pical characteristics www.cj-elec.com 2 & , 0 d \ ,201
www.cj-elec.com 3 c , may ,201 5 to-220-3l package outline dimensions min max min max a 4.470 4.670 0.176 0.184 a1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 d 10.010 10.310 0.394 0.406 e 8.500 8.900 0.335 0.350 e1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 f 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 l 13.400 13.800 0.528 0.543 l1 3.560 3.960 0.140 0.156 3.735 3.935 0.147 0.155 symbol dimensions in millimeters dimensions in inches 0.100 typ 2.540 typ
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